Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates
- 著者名:
Fossard, F. Brault, J. Gogneau, N. Monroy, E. Enjalbert, F. Dang, L.S. Bellet-Amalric, E. Monnoye, S. Mank, H. Daudin, B. - 掲載資料名:
- Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 457-460
- 発行年:
- 2004
- 開始ページ:
- 1577
- 終了ページ:
- 1580
- 総ページ数:
- 4
- 出版情報:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499434 [0878499431]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Growth of N-Face Polarity III-Nitride Heterostructures on C-Face 4H-SiC by Plasma-Assisted MBE
Trans Tech Publications |
Materials Research Society |
Materials Research Society |
8
国際会議録
Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
Materials Research Society |
Materials Research Society |
Trans Tech Publications |
SPIE - The International Society of Optical Engineering |
Materials Research Society |
12
国際会議録
Controlling 2D/3D Growth of GaN by Molecular-Beam Epitaxy: From Superlattices to Quantum Dots
MRS - Materials Research Society |