Structural, Optical and Electrical Properties of Bulk AlN Crystals Grown by PVT

Structural, Optical and Electrical Properties of Bulk AlN Crystals Grown by PVT

著者名:

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

1541

終了ページ:

1544

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013364
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 Sublimation Growth of Bulk AlN Crystals: Process Temperature and Growth Rate Epelbaum, B.M., Bickermann, M., Winnacker, A. Trans Tech Publications	7 国際会議録 Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient Herro, Z., Bickermann, M., Epelbaum, B.M., Masri, P., Winnacker, A. Trans Tech Publications
2 国際会議録 Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality Epelbaum, B.M., Hofmann, D., Bickermann, M., Winnacker, A. Trans Tech Publications	8 国際会議録 Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder Source Herro, Z.G., Bickermann, M., Epelbaum, B.M., Weingaertner, R., Kuenecke, U., Winnacker, A. Trans Tech Publications
3 国際会議録 Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality Epelbaum, B.M., Hofmann, D., Bickermann, M., Winnacker, A. Trans Tech Publications	9 国際会議録 Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance Bickermann, M., Irmscher, K., Epelbaum, B.M., Winnacker, A. Trans Tech Publications
4 国際会議録 Seeded PVT Growth of Aluminum Nitride on Silicon Carbide Epelbaum, B.M., Bickermann, M., Winnacker, A. Trans Tech Publications	10 国際会議録 Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC Herro, Z.G., Epelbaum, B.M., Bickermann, M., Masri, P., Winnacker, A. Trans Tech Publications
5 国際会議録 Growth and Characterization of High-Quality 6H-SiC (0115) Bulk Crystals O. Filip, B.M. Epelbaum, M. Bickermann, A. Winnacker Trans Tech Publications	11 国際会議録 Flux Growth of SiC Crystals from Eutectic Melt SiC-B4C Epelbaum, B.M., Gurzhiyants, P.A., Herro, Z., Bickermann, M., Winnacker, A. Trans Tech Publications
6 国際会議録 Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide Herro, Z.G., Epelbaum, B.M., Bickermann, M., Masri, P., Seitz, C., Magerl, A., Winnacker, A. Trans Tech Publications	12 国際会議録 Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals O. Filip, B.M. Epelbaum, J. Li, M. Bickermann, X.G. Xu Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12