Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs
- 著者名:
- 掲載資料名:
- Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 457-460
- 発行年:
- 2004
- 開始ページ:
- 1433
- 終了ページ:
- 1436
- 総ページ数:
- 4
- 出版情報:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499434 [0878499431]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation
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4.6 kV, 10.5 mOhm&×cm2 Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers
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