Fabrication of 4H-SiC Double-Epitaxial MOSFETs

Fabrication of 4H-SiC Double-Epitaxial MOSFETs

著者名:

Harada, S.

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

1421

終了ページ:

1424

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013364
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 Analysis of Low On-Resistance in 4H-SiC Double-Epitaxial MOSFET Harada, S., Okamoto, M., Yatsuo, T., Fukuda, K., Arai, K. Trans Tech Publications	7 国際会議録 Fabrication of P-Channel MOSFETs on 4H-SiC C-Face M. Okamoto, M. Iijima, T. Yatsuo, T. Nagano, K. Fukuda Trans Tech Publications
2 国際会議録 4.3 mΩcm2, 1100 V 4H-SiC Implantation and Epitaxial MOSFET Harada, S., Kato, M., Okamoto, M., Yatsuo, T., Fukuda, K., Arai, K. Trans Tech Publications	8 国際会議録 Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility Okamoto, M., Tanaka, M., Yatsuo, T., Fukuda, K. Trans Tech Publications
3 国際会議録 4H-SiC p-Channel MOSFETs with Epi-Channel Structure M. Okamoto, T. Yatsuo, K. Fukuda, H. Okumura, K. Arai Trans Tech Publications	9 国際会議録 Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs Kosugi, R., Okamoto, M., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Arai, K. Trans Tech Publications
4 国際会議録 Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face S. Harada, M. Kato, T. Yatsuo, K. Fukuda, K. Arai Trans Tech Publications	10 国際会議録 Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs Kosugi, R., Okamoto, M., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Arai, K. Trans Tech Publications
5 国際会議録 4H-SiC Lateral RESURF MOSFETs on Carbon-Face Substrates Okamoto, M., Suzuki, S., Kato, M., Yatsuo, T., Fukuda, K. Trans Tech Publications	11 国際会議録 Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs Kojima, K., Ohno, T., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Kushibe, M., Masahara, K., Ishida, Y., Takahashi, … Trans Tech Publications
6 国際会議録 Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing Kosugi, R., Kiritani, N., Suzuki, K., Yatsuo, T., Adachi, K., Fukuda, K. Trans Tech Publications	12 国際会議録 Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs Kojima, K., Ohno, T., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Kushibe, M., Masahara, K., Ishida, Y., Takahashi, … Trans Tech Publications

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