Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC
- 著者名:
Ohshima, T. Lee, K.K. Ishida, Y. Kojima, K. Tanaka, Y. Takahashi, T. Yoshikawa, M. Okumura, H. Arai, K. Kamiya, T. - 掲載資料名:
- Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 457-460
- 発行年:
- 2004
- 開始ページ:
- 1405
- 終了ページ:
- 1408
- 総ページ数:
- 4
- 出版情報:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499434 [0878499431]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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