Electronic Properties of SiON/HfO2 Insulating Stacks on 4H-SiC (0001)

Electronic Properties of SiON/HfO2 Insulating Stacks on 4H-SiC (0001)

著者名:

Afanas'ev, V.V.

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

1361

終了ページ:

1364

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013364
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 SiC/SiO2 Interface States: Properties and Models Afanas'ev, V. V., Ciobanu, F., Dimitrijev, S., Pensl, G., Stesmans, A. Trans Tech Publications	7 国際会議録 Properties of High-k and Extremely Thin Silicon Nitride Stacks Zhang, Z., Fedorenko, Y., Truong, L., Shi, X., Afanas'ev, V., Stesmans, A., Campbell, S.A. Electrochemical Society
2 国際会議録 Traps at the Interface of 3C-SiC/SiO2-MOS-Structures Ciobanu, F., Pensl, G., Nagasawa, H., Schoner, A., Dimitrijev, S., Cheong, K.-Y., Afanas'ev, V.V., Wagner, G. Trans Tech Publications	8 国際会議録 Observation of Carbon Clusters at the 4H-SiC/SiO2 Interface Afanas'ev,V.V., Stesmans,A., Harris,C.I. Trans Tech Publications
3 国際会議録 Point Defects and Traps in Stacks of Ultrathin High-k Metal Oxides on Si Probed by Electron Spin Resonance: Si/HfO2 System and N Incorporation Stesmans, A., Afanas'ev, V., Clemer, K., Chen, F., Campbell, S.A. Electrochemical Society	9 国際会議録 Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces Ciobanu, F., Frank, T., Pensl, G., Afanas'ev, V., Shamuilia, S., Schoner, A., Kimoto, T. Trans Tech Publications
4 国際会議録 Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation Ciobanu, F., Pensl, G., Afanas'ev, V., Schoner, A. Trans Tech Publications	10 国際会議録 Properties of Ultrathin High-k Dielectrics on Si Probed by Electron Spin Resonance-Active Defects: Interfaces and Interlayers Stesmans, A., Afanas'ev, V.V. Electrochemical Society
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