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The SiC-SiO2 Interface: A Unique Advantage of SiC as a Wide Energy-Gap Material

著者名:
Dimitrijev, S.  
掲載資料名:
Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
シリーズ名:
Materials science forum
シリーズ巻号:
457-460
発行年:
2004
開始ページ:
1263
終了ページ:
1268
総ページ数:
6
出版情報:
Uetikon-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878499434 [0878499431]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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