Single Contact-Material MESFETs on 4H-SiC

Single Contact-Material MESFETs on 4H-SiC

著者名:

Tanimoto, S.

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

1221

終了ページ:

1224

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013364
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

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1 国際会議録 Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs Kiritani, N., Hoshi, M., Tanimoto, S., Adachi, K., Nishizawa, S.-i., Yatsuo, T., Okushi, H., Arai, K. Trans Tech Publications	7 国際会議録 4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide Kaneko, S., Tanaka, H., Shimoida, Y., Kiritani, N., Tanimoto, S., Yamanaka, M., Hoshi, M. Trans Tech Publications
2 国際会議録 Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance Na, H. J., Kim, H. J., Adachi, K., Kiritani, N., Tanimoto, S., Okushi, H., Arai, K. Trans Tech Publications	8 国際会議録 4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide Kaneko, S., Tanaka, H., Shimoida, Y., Kiritani, N., Tanimoto, S., Yamanaka, M., Hoshi, M. Trans Tech Publications
3 国際会議録 Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance Na, H.J., Kim, H.J., Adachi, K., Kiritani, N., Tanimoto, S., Okushi, H., Arai, K. Trans Tech Publications	9 国際会議録 Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates Ono, R., Fujimaki, M., Hon-Joo, N., Tanimoto, S., Shinohe, T., Yatsuo, T., Okushi, H., Arai, K. Trans Tech Publications
4 国際会議録 Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process Tanimoto, S., Kiritani, N., Hoshi, M., Okushi, H., Arai, K. Trans Tech Publications	10 国際会議録 Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS) Ono, R., Fujimaki, M., Senzaki, J., Tanimoto, S., Shinohe, T., Okushi, H., Arai, K. Trans Tech Publications
5 国際会議録 Ohmic Contact Structure and Fabrication Process Applicable to Practical SiC Devices Tanimoto, S., Kiritani, N., Hoshi, M., Okushi, H. Trans Tech Publications	11 国際会議録 Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS) Ono, R., Fujimaki, M., Senzaki, J., Tanimoto, S., Shinohe, T., Okushi, H., Arai, K. Trans Tech Publications
6 国際会議録 Ohmic Contact Structure and Fabrication Process Applicable to Practical SiC Devices Tanimoto, S., Kiritani, N., Hoshi, M., Okushi, H. Trans Tech Publications	12 国際会議録 Electrical Characteristics of Al+ Ion-Implanted 4H-SiC Tanaka, H., Tanimoto, S., Yamanaka, M., Hoshi, M. Trans Tech Publications

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