600V 4H-SiC RESURF-Type JFET

600V 4H-SiC RESURF-Type JFET

著者名:

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

1189

終了ページ:

1192

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013364
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 Fast Switching Characteristics of 4H-SiC RESURF-Type JFET K. Fujikawa, K. Sawada, T. Tsuno, H. Tamaso, S. Harada Trans Tech Publications	7 国際会議録 Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications
2 国際会議録 High Temperature Characteristics of 4H-SiC RESURF-Type JFET K. Fujikawa, K. Sawada, H. Tokuda, H. Tamaso, S. Harada Trans Tech Publications	8 国際会議録 High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers Schoner, A., Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications
3 国際会議録 Fabrication of a Multi-Chip Module of 4H-SiC RESURF-Type JFETs H. Tamaso, J. Shinkai, T. Hoshino, H. Tokuda, K. Sawada, K. Fujikawa, T. Masuda, S. Hatsukawa, S. Harada, Y. Namikawa Trans Tech Publications	9 国際会議録 Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications
4 国際会議録 Fabrication and Initial Characterization of 600 V 4H-SiC RESURF-type JFETs Hatsukawa, Satoshi, Iiyama, Michitomo, Fujikawa, Kazuhiro, Ito, Atsushi Materials Research Society	10 国際会議録 Dose Designing fof High-Voltage 4H-SiC RESURF MOSFETs - Device Simulation and Fabrication Kawano, H., Kimoto, T., Suda, J., Matsunami, H. Trans Tech Publications
5 国際会議録 Low On-Resistance in 4H-SiC RESURF JFETs Fabricated with Dry Process for Imptantation Metal Mask Masuda, T., Fujikawa, K., Shibata, K., Tamaso, H., Hatsukawa, S., Tokuda, H., Saegusa, A., Namikawa, Y., Hayashi, H. Trans Tech Publications	11 国際会議録 Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition Fujiwara, H., Danno, K., Kimoto, T., Tojo, T., Matsunami, H. Trans Tech Publications
6 国際会議録 PWM Power Supply Using SiC RESURF JFETs with High Speed Switching S. Hatsukawa, T. Tsuno, K. Fujikawa, N. Shiga, T. Wuren Trans Tech Publications	12 国際会議録 Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS Danno, K., Kimoto, T., Matsunami, H. Trans Tech Publications

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