SiC-Based Current Limiter Devices

SiC-Based Current Limiter Devices

著者名:

Chante, J.P.

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

951

終了ページ:

956

総ページ数:

6

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013364
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization Isoird, K., Lazar, M., Locatelli, M.-L., Raynaud, C., Planson, D., Chante, J.P. Trans Tech Publications	7 国際会議録 A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects Lazar, M., Raynaud, C., Planson, D., Locatelli, M.-L., Isoird, K., Ottaviani, L., Chante, J.P., Nipoti, R., Poggi, A., … Trans Tech Publications
2 国際会議録 Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization Isoird, K., Lazar, M., Locatelli, M.-L., Raynaud, C., Planson, D., Chante, J.P. Trans Tech Publications	8 国際会議録 Simulation Study of a Novel Current-Limiting Device: A Vertical α-SiC JFET - Controlled Current Limiter Tournier, D., Godignon, P., Planson, D., Chante, J.P., Sarrus, F. Trans Tech Publications
3 国際会議録 Characterization of a 4H-SiC High Power Density Controlled Current Limiter Tournier, D., Godignon, Ph., Montserrat, J., Planson, D., Raynaud, C., Lazar, M., Chante, J.P., Sarrus, F., Bonhomme, … Trans Tech Publications	9 国際会議録 Simulation Study of a Novel Current-Limiting Device: A Vertical α-SiC JFET - Controlled Current Limiter Tournier, D., Godignon, P., Planson, D., Chante, J.P., Sarrus, F. Trans Tech Publications
4 国際会議録 Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor Brosselard, P., Zorngiebel, V., Planson, D., Scharnholz, S., Chante, J.P., Spahn, E., Raynaud, C., Lazar, M. Trans Tech Publications	10 国際会議録 P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth Lazar, M., Jacquier, C., Dubois, C., Raynaud, C., Ferro, G., Planson, D., Brosselard, P., Monteil, Y., Chante, J. P. Trans Tech Publications
5 国際会議録 High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing Lazar, M., Ottaviani, L., Locatelli, M.L., Raynaud, C., Planson, D., Morvan, E., Godignon, P., Skorupa, W., Chante, J.P. Trans Tech Publications	11 国際会議録 A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery Brosselard, P., Bouchet, T., Planson, D., Scharnholz, S., Paques, G., Lazar, M., Raynaud, C., Chante, J. P., Spahn, E. Trans Tech Publications
6 国際会議録 A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects Lazar, M., Raynaud, C., Planson, D., Locatelli, M.-L., Isoird, K., Ottaviani, L., Chante, J.P., Nipoti, R., Poggi, A., … Trans Tech Publications	12 国際会議録 Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation Isoird, K., Ottaviani, L., Locatelli, M. L., Planson, D., Raynaud, C., Bevilacqua, P., Chante, J. P. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12