Mechanisms in Electrochemical Etching of α-SiC Substrates

Mechanisms in Electrochemical Etching of α-SiC Substrates

著者名:

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

813

終了ページ:

816

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013364
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 Surface Structure of Electrochemically Etched α-SiC Substrates Mikami, H., Umetani, A., Hatayama, T., Yano, H., Uraoka, Y., Fuyuki, T. Trans Tech Publications	7 国際会議録 Increased Channel Mobility in 4H-SiC UMOSFETs Using On-Axis Substrates H. Yano, H. Nakao, T. Hatayama, Y. Uraoka, T. Fuyuki Trans Tech Publications
2 国際会議録 Fast Oxidation of 4H-SiC at Room Temperature by Electrochemical Methods Mikami, H., Hatayama, T., Yano, H., Uraoka, Y., Fuyuki, T. Trans Tech Publications	8 国際会議録 Sloped Sidewalls in 4H-SiC Mesa Structure Formed by a Cl2-O2 Thermal Etching S. Takenami, T. Hatayama, H. Yano, Y. Uraoka, T. Fuyuki Trans Tech Publications
3 国際会議録 Reduction of Fluoride Species and Surface Roughness by H2 Gas Addition in SiC Dry Etching Mikami, H., Horie, Y., Hatayama, T., Yano, H., Uraoka, Y., Fuyuki, T. Trans Tech Publications	9 国際会議録 Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T. Trans Tech Publications
4 国際会議録 Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen T. Hatayama, T. Shimizu, H. Yano, Y. Uraoka, T. Fuyuki Trans Tech Publications	10 国際会議録 Relationship between Surface Structures and Aluminium Incorporation Behaviour of SiC in Chemical Vapor Deposition Hatayama, T., Yano, H., Uraoka, Y., Fuyuki, T. Trans Tech Publications
5 国際会議録 Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment Maeyama, Y., Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T., Shirafuji, T. Trans Tech Publications	11 国際会議録 High Temperature NO Annealing of Deposited SiO2 and SiON Films on N-Type 4H-SiC Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T. Trans Tech Publications
6 国際会議録 Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment Maeyama, Y., Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T., Shirafuji, T. Trans Tech Publications	12 国際会議録 High Purity SiC EpitaxiaI Growth by Chemical Vapor Deposition Using CH3SiH3 and C3H8 Sources Hatayama, T., Yano, H., Uraoka, Y., Fuyuki, T. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12