Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements

Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements

著者名:

Juillaguet, S.

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

775

終了ページ:

778

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013363
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiC Zielinski, M., Balloud, C., Juillaguet, S., Boyer, B., Souliere, V., Camassel, J. Trans Tech Publications	7 国際会議録 Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method Contreras, S., Zielinski, M., Konczewicz, L., Blanc, C., Juillaguet, S., Muller, R., Kunecke, U., Wellmann, P.J., … Trans Tech Publications
2 国際会議録 Evaluation of p-Type Doping for (1120) Epitaxial Layers Grown on α-Cut (1120) 4H-SiC Substrates Blanc, C., Zielinski, M., Souliere, V., Sartel, C., Juillaguet, S., Contreras, S., Camassel, J., Monteil, Y. Trans Tech Publications	8 国際会議録 Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt Jacquier, C., Ferro, G., Balloud, C., Zielinski, M., Camassel, J., Polychroniadis, E., Stoemenos, J., Cauwet, F., … Trans Tech Publications
3 国際会議録 Aluminum Doping of 4H-SiC Grown with HexaMethylDiSilane Sartel, C., Souliere, V., Zielinski, M., Monteil, Y., Camassel, J., Rushworth, S. Trans Tech Publications	9 国際会議録 Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method Chaussende, D., Balloud, C., Auvray, L., Baillet, F., Zielinski, M., Juillaguet, S., Mermoux, M., Pernot, E., Camassel, … Trans Tech Publications
4 国際会議録 Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor Systems Sartel, C., Balloud, C., Souliere, V., Juillaguet, S., Dazord, J., Monteil, Y., Camassel, J., Rushworth, S. Trans Tech Publications	10 国際会議録 Comparative Evaluation of Free-Standing 3C-SiC Crystals Polychroniadis, E. K., Balloud, C., Juillaguet, S., Ferro, G., Monteil, Y., Camassel, J., Stoemenos, J. Trans Tech Publications
5 国際会議録 Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers Juillaguet, S., Balloud, C., Pernot, J., Sartel, C., Souliere, V., Camassel, J., Monteil, Y. Trans Tech Publications	11 国際会議録 Growth at High Rates and Characterization of Bulk 3C-SiC Material Ferro, G., Balloud, C., Juillaguet, S., Vicente, P., Camassel, J., Monteil, Y. Trans Tech Publications
6 国際会議録 Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates Blanc, C., Sartel, C., Souliere, V., Juillaguet, S., Monteil, Y., Camassel, J. Trans Tech Publications	12 国際会議録 Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System Sartel, C., Bluet, J.M., Souliere, V., El-Harrouni, I., Monteil, Y., Mermoux, M., Guillot, G. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12