Formation of SiC Delta-Doped-Layer Structures by CVD

Formation of SiC Delta-Doped-Layer Structures by CVD

著者名:

Takahashi, K.

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

743

終了ページ:

746

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013363
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 Delta-Doped Layers of SiC Grown by 'Pulse Doping' Technique Takahashi, K., Yokogawa, T., Uchida, M., Kusumoto, O., Yamashita, K., Miyanaga, R., Kitabatake, M. Trans Tech Publications	7 国際会議録 Surface Morphology of SiC Epitaxial Layers Grown by Vertical Hot-Wall Type CVD Takahashi, K., Uchida, M., Yokogawa, T., Kusumoto, O., Yamashita, K., Miyanaga, R., Kitabatake, M. Trans Tech Publications
2 国際会議録 Delta-Doped Layers of SiC Grown by 'Pulse Doping' Technique Takahashi, K., Yokogawa, T., Uchida, M., Kusumoto, O., Yamashita, K., Miyanaga, R., Kitabatake, M. Trans Tech Publications	8 国際会議録 SIMS Analyses of SiO2/4H-SiC(0001) Interface Yamashita, K., Kitabatake, M., Kusumoto, O., Takahashi, K., Uchida, M., Miyanaga, R., Itoh, H., Yoshikawa, M. Trans Tech Publications
3 国際会議録 SiC Delta-Doped-Layer Structures and DACFET Takahashi, K., Kusumoto, O., Uchida, M., Yamashita, K., Kitabatake, M. Trans Tech Publications	9 国際会議録 SIMS Analyses of SiO2/4H-SiC(0001) Interface Yamashita, K., Kitabatake, M., Kusumoto, O., Takahashi, K., Uchida, M., Miyanaga, R., Itoh, H., Yoshikawa, M. Trans Tech Publications
4 国際会議録 SiC Vertical DACFET (Vertical Delta-Doped Accumulation Channel MOSFET) Kusumoto, O., Yokogawa, T., Yamashita, K., Takahashi, K., Kitabatake, M., Uchida, M., Miyanaga, R. Trans Tech Publications	10 国際会議録 4H-SiC Delta-Doped Accumulation-Channel MOS FET Yokogawa, T., Takahashi, K., Kusumoto, O., Uchida, M., Yamashita, K., Kitabatake, M. Trans Tech Publications
5 国際会議録 SiC Vertical DACFET (Vertical Delta-Doped Accumulation Channel MOSFET) Kusumoto, O., Yokogawa, T., Yamashita, K., Takahashi, K., Kitabatake, M., Uchida, M., Miyanaga, R. Trans Tech Publications	11 国際会議録 4H-SiC Delta-Doped Accumulation-Channel MOS FET Yokogawa, T., Takahashi, K., Kusumoto, O., Uchida, M., Yamashita, K., Kitabatake, M. Trans Tech Publications
6 国際会議録 Surface Morphology of SiC Epitaxial Layers Grown by Vertical Hot-Wall Type CVD Takahashi, K., Uchida, M., Yokogawa, T., Kusumoto, O., Yamashita, K., Miyanaga, R., Kitabatake, M. Trans Tech Publications	12 国際会議録 Heteroepitaxial Growth of 3C-SiC on Surface-Structure-Controlled MBE Layer by Low-Pressure CVD Uchida,M., Deguchi,M., Takahashi,K., Kitabatake,M., Kitagawa,M. Trans Tech Publications

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