Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source

Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source

著者名:

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

727

終了ページ:

730

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013363
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

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2 国際会議録 Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method Straubinger, T.L., Bickermann, M., Rasp, M., Weingartner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications	8 国際会議録 Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray Imaging Wellmann, P.J., Herro, Z., Straubinger, T.L., Winnacker, A. Trans Tech Publications
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4 国際会議録 Study of Boron Incorporation During PVT Growth of p-type SiC Crystals Bickermann, M., Hofmann, D., Rasp, M., Straubinger, T.L., Weingaertner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications	10 国際会議録 Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process Wellmann, P.J., Hofmann, D., Kadinski, L., Selder, M., Straubinger, T.L., Winnacker, A. Trans Tech Publications
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