Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

著者名:

Kalinina, E.

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

705

終了ページ:

710

総ページ数:

6

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013363
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions Kalinina, E., Kholujanov, G., Onushkin, G., Davydov, D., Strel'chuk, A., Zubrilov, A., Hallen, A., Konstantinov, A., … Trans Tech Publications	7 国際会議録 Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers Kalinina, E., Kholujanov, G., Sitnikova, A., Kossov, V., Yafaev, R., Pensl, G., Reshanov, S., Hallen, A., Konstantinov, … Trans Tech Publications
2 国際会議録 Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions Kalinina, E., Kholuyanov, G., Onushkin, G., Davydov, D., Strel'chuk, A., Konstantinov, A., Hallen, A., Skuratov, V., … Trans Tech Publications	8 国際会議録 High Energy Resolution Detectors Based on 4H-SiC Ivanov, A., Kalinina, E., Kholuyanov, G., Strokan, N., Onushkin, G., Konstantinov, A., Hallen, A., Kuznetsov, A. Trans Tech Publications
3 国際会議録 Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures Strel'chuk, A. M., Kalinina, E. V., Konstantinov, A. O., Hallen, A. Trans Tech Publications	9 国際会議録 Recombination and Excess Currents in 4H-SiC Structure with Low-Doped n-Region A.M. Strel'chuk, E.V. Kalinina Trans Tech Publications
4 国際会議録 Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices Kalinina, E., Kholujanov, G., Gol'dberg, Y., Blank, T., Onushkin, G., Strel'chuk, A., Violina, G., Kossov, V., Yafaev, … Trans Tech Publications	10 国際会議録 Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation Lebedev, A. A., Davydov, D. V., Strel'chuk, A. M., Kuznetsov, A. N., Bogdanova, E. V., Kozlovski, V. V., Savkina, N. S. Trans Tech Publications
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