SiC Studied Via LEEN and Cathodoluminescence Spectroscopy

SiC Studied Via LEEN and Cathodoluminescence Spectroscopy

著者名:

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

543

終了ページ:

548

総ページ数:

6

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013363
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

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2 国際会議録 4H- to 3C-SiC Polytypic Transformation during Oxidation Okojie, R.S., Xhang, M., Pirouz, P., Tumakha, S., Jessen, G., Brillson, L.J. Trans Tech Publications	8 国際会議録 Cathodoluminescence Deep-Level Spectroscopy of Etched and In Situ Annealed 6H-SiC Young, A. P., Aptowitz, K., Brillson, L. J. MRS - Materials Research Society
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4 国際会議録 Surface Morphology and Chemistry of 4H- and 6H-SiC after Cyclic Oxidation Okojie, R.S., Lukco, D., Keys, L., Tumakha, S., Brillson, L.J. Trans Tech Publications	10 国際会議録 Development of an Extreme High Temperature n-Type Ohmic Contact to Silicon Carbide L.J. Evans, R.S. Okojie, D. Lukco Trans Tech Publications
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