EPR and Pulsed ENDOR Study of El6 and Related Defects in 4H-SiC

EPR and Pulsed ENDOR Study of El6 and Related Defects in 4H-SiC

著者名:

Umeda, T.

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

465

終了ページ:

468

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013363
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC T. Umeda, N. Morishita, T. Ohshima, H. Itoh, J. Isoya Trans Tech Publications	7 国際会議録 Shallow P Donors in 3C-, 4H- and 6H-SiC Isoya, J., Katagiri, M., Umeda, T., Son, N.T., Henry, A., Gali, A., Morishita, N., Ohshima, T., Itoh, H., Janzen, E. Trans Tech Publications
2 国際会議録 EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC Mizuochi, N., Isoya, J., Yamasaki, S., Takizawa, H., Morishita, N., Ohshima, T., Itoh, H. Trans Tech Publications	8 国際会議録 The Carbon Vacancy Related E14 Defect in 4H-SiC N.T. Son, P. Carlsson, J. Isoya, N. Morishita, T. Ohshima Trans Tech Publications
3 国際会議録 EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC Mizuochi, N., Isoya, J., Yamasaki, S., Takizawa, H., Morishita, N., Ohshima, T., Itoh, H. Trans Tech Publications	9 国際会議録 Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC Son, N.T., Umeda, T., Isoya, J., Gali, A., Bockstedte, M., Magnusson, B., Ellison, A., Morishita, N., Ohshima, T., Itoh, … Trans Tech Publications
4 国際会議録 Electron Paramagnetic Resonance Study of Carbon Antisite-Vacancy Pair in p-Type 4H-SiC T. Umeda, N. Morishita, T. Ohshima, H. Itoh, J. Isoya Trans Tech Publications	10 国際会議録 Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC P. Carlsson, N.T. Son, H. Pedersen, J. Isoya, N. Morishita Trans Tech Publications
5 国際会議録 Pulsed EPR Studies of the T_v2a Center in 4H-SiC J. Isoya, T. Umeda, N. Mizuochi, T. Ohshima Trans Tech Publications	11 国際会議録 Defects Introduced by Electron-Irradiation at Low Temperatures in SiC N.T. Son, J. Isoya, N. Morishita, T. Ohshima, H. Itoh Trans Tech Publications
6 国際会議録 Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4E-SiC Umeda, T., Son, N.T., Isoya, J., Morishita, N., Ohshima, T., Itoh, H., Janzen, E. Trans Tech Publications	12 国際会議録 Identification of the Negative Di-Carbon Antisite Defect in n-Type 4H-SiC A. Gali, T. Umeda, E. Janzen, N. Morishita, T. Ohshima Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12