The Atomic Structure of the Hydrogen Saturated a-Planes of 4H-SiC
- 著者名:
Seyller, Th. Sieber, N. Emtsev, K.V. Graupner, R. Ley, L. Tadich, A. James, D. Riley, J.D. Leckey, R.C.G. Polcik, M. - 掲載資料名:
- Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 457-460
- 発行年:
- 2004
- 開始ページ:
- 395
- 終了ページ:
- 398
- 総ページ数:
- 4
- 出版情報:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499434 [0878499431]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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4
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Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy
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