Flash Lamp Supported Deposition of 3C-SiC (FLASiC) ? a Promising Technique to Produce High Quality Cubic SiC Layers

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

175

終了ページ:

180

総ページ数:

6

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013363
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

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2 国際会議録 Structural Characterization of Thin 3C-SiC Films Annealed by the Flash Lamp Process Polychroniadis, E., Stoemenos, J., Ferro, G., Monteil, Y., Panknin, D., Skorupa, W. Trans Tech Publications	8 国際会議録 Effect of the Crystallization Conditions on the Epitaxial Relationship of Si Deposited on 3C-SiC(100) Ferro, G., Polychroniadis, E.K., Panknin, D., Skorupa, W., Stoemenos, J., Monteil, Y. Trans Tech Publications
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