Growth of Bulk SiC by Halide Chemical Vapor Deposition

Growth of Bulk SiC by Halide Chemical Vapor Deposition

著者名:

Fanton, M.

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

87

終了ページ:

90

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013363
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC Nigam, S., Chung, H.J., Huh, S.W., Grim, J., Polyakov, A.Y., Fanton, M.A., Weiland, B., Snyder, D.W., Skowronski, M. Trans Tech Publications	7 国際会議録 Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes Garces, N.Y., Carlos, W.E., Glaser, E.R., Huh, S.W., Chung, H.J., Nigam, S., Polyakov, A.Y., Skowronski, M. Trans Tech Publications
2 国際会議録 Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition Huh, S.W., Polyakov, A.Y., Chung, H.J., Nigam, S., Skowronski, M., Glaser, E.R., Carlos, W.E., Fanton, M.A., Smirnov, … Trans Tech Publications	8 国際会議録 Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates Glaser, E.R., Shanabrook, B.V., Carlos, W.E., Chung, H.J., Nigam, S., Polyakov, A.Y., Skowronski, M. Trans Tech Publications
3 国際会議録 Halide-CVD Growth of Bulk SiC Crystals Polyakov, A.Y., Fanton, M.A., Skowronski, M., Chung, H.J., Nigam, S., Huh, S.W. Trans Tech Publications	9 国際会議録 Growth of SiC Boules with Low Boron Concentration Fanton, M.A., Cavalero, R.L., Ray, R.G., Weiland, B.E., Everson, W., Snyder, D.W., Gamble, R.D., Oslosky, E. Trans Tech Publications
4 国際会議録 Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition Chung, H.J., Huh, S.W., Polyakov, A.Y., Nigam, S., Li, Q., Grim, J., Skowronski, M., Glaser, E.R., Carlos, W.E., … Trans Tech Publications	10 国際会議録 Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers Huh, S.W., Sumakeris, J.J., Polyakov, A.Y., Skowronski, M., Klein, P.B., Shanabrook, B.V., O'Loughlin, M.J. Trans Tech Publications
5 国際会議録 Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition M.E. Zvanut, H.J. Chung, A.Y. Polyakov, M. Skowronski Trans Tech Publications	11 国際会議録 Thermal Decomposition Cavities in Physical Vapor Transport Grown SiC Sanchez, E. K., Heydemann, V. D., Snyder, D. W., Rohrer, G. S., Skowronski, M. Trans Tech Publications
6 国際会議録 Hybrid Physical-Chemical Vapor Transport Growth of SiC Bulk Crystals Fanton, M.A., Li, Q., Polyakov, A.Y., Cavalero, R.L., Ray, R.G., Weiland, B.E., Skowronski, M. Trans Tech Publications	12 国際会議録 Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide Sanchez, E. K., Heydemann, V. D., Snyder, D. W., Rohrer, G. S., Skowronski, M. Trans Tech Publications

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