Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique

Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique

著者名:

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

47

終了ページ:

50

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013363
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates Nishino, S., Nishiguchi, T., Masuda, Y., Sasaki, M., Ohshima, S. Materials Research Society	7 国際会議録 Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy Takagi, H., Nishiguchi, T., Ohta, S., Furusho, T., Ohshima, S., Nishino, S. Trans Tech Publications
2 国際会議録 Crystal Growth of 15R-SiC Boules by Sublimation Method Nishiguchi, T., Okada, S., Sasaki, M., Harima, H., Nishino, S. Trans Tech Publications	8 国際会議録 Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method Isshiki, T., Nakamura, M., Nishiguchi, T., Nishio, K., Ohshima, S., Nishino, S. Trans Tech Publications
3 国際会議録 Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate Nakamura, M., Isshiki, T., Nishiguchi, T., Nishio, K., Ohshima, S., Nishino, S. Trans Tech Publications	9 国際会議録 Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition Nishiguchi, T., Mukai, Y., Nakamura, M., Nishio, K., Isshiki, T., Ohshima, S., Nishino, S. Trans Tech Publications
4 国際会議録 Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC Tanaka, H., Nishiguchi, T., Sasaki, M., Ohshima, S., Nishino, S. Trans Tech Publications	10 国際会議録 Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate Nishiguchi, T., Nakamura, M., Nishio, K., Isshiki, T., Ohshima, S., Nishino, S. Trans Tech Publications
5 国際会議録 Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates Nishiguchi, T., Masuda, Y., Ohshima, S., Nishino, S. Trans Tech Publications	11 国際会議録 Mechanism for Damage Healing of Cracked 6H-SiC Substrates by the Sublimation Method Shimizu, T., Nishiguchi, T., Sasaki, M., Ohshima, S., Nishino, S. Trans Tech Publications
6 国際会議録 Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates Nishiguchi, T., Masuda, Y., Ohshima, Satoru, Nishino, S. Trans Tech Publications	12 国際会議録 Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method Okada, S., Nishiguchi, T., Shimizu, T., Sasaki, M., Oshima, S., Nishino, S. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12