White Light Emitting Diodes of GaN-Based Sr2SiO4:Eu and the Luminescent Properties
- 著者名:
- 掲載資料名:
- Designing, processing and properties of advanced engineering materials : proceedings of the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials, held in Jeju, Korea, November 5-8, 2003
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 449-452
- 発行年:
- 2004
- 開始ページ:
- 953
- 終了ページ:
- 956
- 総ページ数:
- 4
- 出版情報:
- Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499397 [0878499393]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society |
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
SPIE-The International Society for Optical Engineering |
3
国際会議録
Homoepitaxial growth of InGaN/GaN double-heterostructure light-emitting diode by low-pressure MOCVD
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
Trans Tech Publications |
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
SPIE - The International Society for Optical Engineering |
12
国際会議録
Phosphor-free white light-emitting diode using InGaN/GaN multiple quantum wells grown on microfacets
Society of Photo-optical Instrumentation Engineers |