OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension

OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension

著者名:

掲載資料名:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

シリーズ名:

Materials science forum

シリーズ巻号:

433-436

発行年:

2003

開始ページ:

863

終了ページ:

866

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013351
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2002 : 4th
会議開催地:	Linköping, Sweden
会議開催年:	2002.09.02-2002.09.05

類似資料:

1 国際会議録 Design, Fabrication and Characterization of 5 kV 4H-SiC p+n Planar Bipolar Diodes Protected by Junction Termination Extension Raynaud, C., Lazar, M., Planson, D., Chante, J.P., Sassi, Z. Trans Tech Publications	7 国際会議録 The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study Lazar, M., Cardinali, G., Raynaud, C., Poggi, A., Planson, D., Nipoti, R., Chante, J.P. Trans Tech Publications
2 国際会議録 Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation Isoird, K., Ottaviani, L., Locatelli, M. L., Planson, D., Raynaud, C., Bevilacqua, P., Chante, J. P. Trans Tech Publications	8 国際会議録 1.2 kV Pin Diodes with SiCrystal Epiwafer H. Vang, C. Raynaud, P. Brosselard, M. Lazar, P. Cremillieu, J.L. Leclercq, S. Scharnholz, D. Planson, J. Chante Trans Tech Publications
3 国際会議録 Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization Isoird, K., Lazar, M., Locatelli, M.-L., Raynaud, C., Planson, D., Chante, J.P. Trans Tech Publications	9 国際会議録 Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor Brosselard, P., Zorngiebel, V., Planson, D., Scharnholz, S., Chante, J.P., Spahn, E., Raynaud, C., Lazar, M. Trans Tech Publications
4 国際会議録 Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization Isoird, K., Lazar, M., Locatelli, M.-L., Raynaud, C., Planson, D., Chante, J.P. Trans Tech Publications	10 国際会議録 SiC-Based Current Limiter Devices Chante, J.P., Tournier, D., Planson, D., Raynaud, C., Lazar, M., Locatelli, M.L., Brosselard, P. Trans Tech Publications
5 国際会議録 Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes Ortolland,S., Locatelli,M.L., Planson,D., Chante,J.P., Senes,A. Trans Tech Publications	11 国際会議録 High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing Lazar, M., Ottaviani, L., Locatelli, M.L., Raynaud, C., Planson, D., Morvan, E., Godignon, P., Skorupa, W., Chante, J.P. Trans Tech Publications
6 国際会議録 OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes C. Raynaud, D. Loup, P. Godignon, R.P. Rodriguez, D. Tournier, D. Planson Trans Tech Publications	12 国際会議録 A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects Lazar, M., Raynaud, C., Planson, D., Locatelli, M.-L., Isoird, K., Ottaviani, L., Chante, J.P., Nipoti, R., Poggi, A., … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12