Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base

Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base

著者名:

掲載資料名:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

シリーズ名:

Materials science forum

シリーズ巻号:

433-436

発行年:

2003

開始ページ:

855

終了ページ:

858

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013351
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2002 : 4th
会議開催地:	Linköping, Sweden
会議開催年:	2002.09.02-2002.09.05

類似資料:

1 国際会議録 Electrical Performance of 4H-SiC Based Drift Step Recovery Diodes P.A. Ivanov, O. Kon'kov, T. Samsonova, A. Potapov, I. Grekhov Trans Tech Publications	7 国際会議録 DLTS Measurements on 4H-SiC JBS-Diodes with Boron Implanted Local P-N Junctions P.A. Ivanov, O. Korolkov, T.P. Samsonova, N. Sleptsuk, A.S. Potapov Trans Tech Publications
2 国際会議録 Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes P.A. Ivanov, I.V. Grekhov, A.S. Potapov, N.D. Il'inskaya, O.I. Kon'kov Trans Tech Publications	8 国際会議録 Self-Heating of 4H-SiC PiN Diodes at High Current Densities M.E. Levinshtein, T.T. Mnatsakanov, P.A. Ivanov, J.W. Palmour, M.K. Das Trans Tech Publications
3 国際会議録 Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode P.A. Ivanov, I.V. Grekhov Trans Tech Publications	9 国際会議録 Overlapping Shockley/Frank Faults in 4F-SiC PiN Diodes Twigg, M.E., Stahlbush, R.E., Losee, P.A., Li, C.H., Bhat, I.B., Chow, T.P. Trans Tech Publications
4 国際会議録 Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction P.A. Ivanov, I.V. Grekhov Trans Tech Publications	10 国際会議録 Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs Ivanov, P.A., Levinshtein, M.E., Agarwal, A.K., Palmour, J.W., Ryu, S.H. Trans Tech Publications
5 国際会議録 Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers P.A. Ivanov, A.S. Potapov, T.P. Samsonova Trans Tech Publications	11 国際会議録 Growth of 4H and 6H SiC in Trenches and Around Stripe Mesas Nordell,N., Karlsson,S., Konstantinov,A.O. Trans Tech Publications
6 国際会議録 SiC Surface Engineering for High Voltage JFET Applications Ivanov,P.A., Kon'kov,0.I., Konstantinov,A.O., Panteleev,V.N., Samsonova,T.P., Nordell,N., Karlsson,S., Harris,C.I. Trans Tech Publications	12 国際会議録 Ionization Rates and Critical Fields in 4H SiC Junction Devices Konstantinov,A.O., Wahab,Q., Nordell,N., Lindefelt,U. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12