Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement

Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement

著者名:

掲載資料名:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

シリーズ名:

Materials science forum

シリーズ巻号:

433-436

発行年:

2003

開始ページ:

685

終了ページ:

688

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013351
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2002 : 4th
会議開催地:	Linköping, Sweden
会議開催年:	2002.09.02-2002.09.05

類似資料:

1 国際会議録 Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements Tsuji, T., Izumi, S., Ueda, A., Fujisawa, H., Ueno, K., Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	7 国際会議録 Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diodes by Atomic Force Microscope T. Katsuno, Y. Watanabe, T. Ishikawa, H. Fujiwara, M. Konishi Trans Tech Publications
2 国際会議録 Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements Tsuji, T., Izumi, S., Ueda, A., Fujisawa, H., Ueno, K., Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	8 国際会議録 A Study of Post Annealing Effects in the Repair of High Resistance Failures with Unstable Schottky Barrier Height in 4H-SiC Schottky Barrier Diode S.S. Kyoung, E.S. Jung, T.Y. Kang, C.H. Yang, M.Y. Sung Trans Tech Publications
3 国際会議録 Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature Saitoh, H., Kimoto, T., Matsunami, H. Trans Tech Publications	9 国際会議録 Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers Izumi, S., Tsuchida, H., Tawara, T., Kamata, I., Izumi, K. Trans Tech Publications
4 国際会議録 Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties Izumi, S., Kamata, I., Tawara, T., Fujisawa, H., Tsuchida, H. Trans Tech Publications	10 国際会議録 Electroluminescence Analysis of Al+ and B+ Implanted pn Diodes Fujisawa, H., Tsuji, T., Izumi, S., Ueno, K., Kamata, I., Tsuchida, T., Jikimoto, T., Izumi, K. Trans Tech Publications
5 国際会議録 4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density J. Schoeck, J. Buettner, M. Rommel, T. Erlbacher, A.J. Bauer Trans Tech Publications	11 国際会議録 Electroluminescence Analysis of Al+ and B+ Implanted pn Diodes Fujisawa, H., Tsuji, T., Izumi, S., Ueno, K., Kamata, I., Tsuchida, T., Jikimoto, T., Izumi, K. Trans Tech Publications
6 国際会議録 Defect Related Leakage Current Components in SiC Schottky Barrier Diode K. Ohtsuka, T. Nakatani, A. Nagae, H. Watanabe, Y. Nakaki Trans Tech Publications	12 国際会議録 Fabrication of 3.4kV High Voltage n-Type 4H-SiC Schottky Barrier Diodes Using Thick Epitaxial Layers Tsuji, Takashi, Fujisawa, Hiroyuki, Ogino, Shinji, Tsuchida, Hidekazu, Kamata, Isaho, Jikimoto, Tamotsu, Izumi, Kunikazu Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12