Quantitative Evaluation of Implantation Damage and Damage Recovery after Room Temperature Ion-Implantation of N+ and P+ Ions in 6H-SiC
- 著者名:
Blanque, S. Perez, R. Zielinski, M. Pernot, J. Mestres, N. Pascual, J. Godignon, P. Camassel, J. - 掲載資料名:
- Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 433-436
- 発行年:
- 2003
- 開始ページ:
- 653
- 終了ページ:
- 656
- 総ページ数:
- 4
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499205 [0878499202]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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1
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Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals
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5
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Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation
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