SiC Delta-Doped-Layer Structures and DACFET

SiC Delta-Doped-Layer Structures and DACFET

著者名:

掲載資料名:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

シリーズ名:

Materials science forum

シリーズ巻号:

433-436

発行年:

2003

開始ページ:

629

終了ページ:

632

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013351
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2002 : 4th
会議開催地:	Linköping, Sweden
会議開催年:	2002.09.02-2002.09.05

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2 国際会議録 SiC Vertical DACFET (Vertical Delta-Doped Accumulation Channel MOSFET) Kusumoto, O., Yokogawa, T., Yamashita, K., Takahashi, K., Kitabatake, M., Uchida, M., Miyanaga, R. Trans Tech Publications	8 国際会議録 Surface Morphology of SiC Epitaxial Layers Grown by Vertical Hot-Wall Type CVD Takahashi, K., Uchida, M., Yokogawa, T., Kusumoto, O., Yamashita, K., Miyanaga, R., Kitabatake, M. Trans Tech Publications
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4 国際会議録 Delta-Doped Layers of SiC Grown by 'Pulse Doping' Technique Takahashi, K., Yokogawa, T., Uchida, M., Kusumoto, O., Yamashita, K., Miyanaga, R., Kitabatake, M. Trans Tech Publications	10 国際会議録 SIMS Analyses of SiO2/4H-SiC(0001) Interface Yamashita, K., Kitabatake, M., Kusumoto, O., Takahashi, K., Uchida, M., Miyanaga, R., Itoh, H., Yoshikawa, M. Trans Tech Publications
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6 国際会議録 4H-SiC Delta-Doped Accumulation-Channel MOS FET Yokogawa, T., Takahashi, K., Kusumoto, O., Uchida, M., Yamashita, K., Kitabatake, M. Trans Tech Publications	12 国際会議録 Electronic Properties of Nitrogen Delta-Doped Silicon Carbide Layers Yokogawa, Toshiya, Takahashi, Kunimasa, Uenoyama, Takeshi, Kusumoto, Osamu, Uchida, Masao, Kitabatake, Makoto Materials Research Society

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