A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface

A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface

著者名:

Olafsson, H.O.

掲載資料名:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

シリーズ名:

Materials science forum

シリーズ巻号:

433-436

発行年:

2003

開始ページ:

547

終了ページ:

550

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013351
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2002 : 4th
会議開催地:	Linköping, Sweden
会議開催年:	2002.09.02-2002.09.05

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2 国際会議録 New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures Olafsson, H.OE., Sveinbjornsson, Einar, Rudenko, T.E., Kilchytska, V.I., Tyagulski, I.P., Osiyuk, I.N. Trans Tech Publications	8 国際会議録 A Study of Deep Energy-Level Traps at the 4H-SiC/SiO₂ Interface and Their Passivation by Hydrogen F. Allerstam, E.Ö. Sveinbjörnsson Trans Tech Publications
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