Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes
- 著者名:
Scaltrito, L. Porro, S. Giorgis, F. Mandracci, P. Cocuzza, M. Pirri, C.F. Ricciardi, C. Ferrero, S. Richieri, G. Sgorlon, C. Merlin, L. Cavallini, A. Castaldini, A. - 掲載資料名:
- Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 433-436
- 発行年:
- 2003
- 開始ページ:
- 455
- 終了ページ:
- 458
- 総ページ数:
- 4
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499205 [0878499202]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
Trans Tech Publications |
2
国際会議録
Design, Fabrication and Characterization of 1.5 mΩcm2, 800 V 4H-SiC n-Type Schottky Barrier Diodes
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |