Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC
- 著者名:
- 掲載資料名:
- Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 433-436
- 発行年:
- 2003
- 開始ページ:
- 447
- 終了ページ:
- 450
- 総ページ数:
- 4
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499205 [0878499202]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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4
国際会議録
Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons
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12
国際会議録
Doping Level Dependence of Electrical Properties for p+n 4H-SiC Diode Formed by Al Ion Implantation
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