Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC

Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC

著者名:

David, M.L.

掲載資料名:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

シリーズ名:

Materials science forum

シリーズ巻号:

433-436

発行年:

2003

開始ページ:

371

終了ページ:

374

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013351
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2002 : 4th
会議開催地:	Linköping, Sweden
会議開催年:	2002.09.02-2002.09.05

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2 国際会議録 Ion Implantation Processing and Related Effects in SiC Svensson, B.G., Hallen, A., Wong-Leung, J., Janson, M.S., Linnarsson, M.K., Kuznetsov, A.Yu., Alfieri, G., Grossner, U., … Trans Tech Publications	8 国際会議録 Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC Alfieri, G., Monakhov, E. V., Linnarsson, K., Svensson, B. G. Trans Tech Publications
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