Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate

Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate

著者名:

掲載資料名:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

シリーズ名:

Materials science forum

シリーズ巻号:

433-436

発行年:

2003

開始ページ:

209

終了ページ:

212

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013351
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2002 : 4th
会議開催地:	Linköping, Sweden
会議開催年:	2002.09.02-2002.09.05

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1 国際会議録 Pendeo Epitaxial Growth of 3C-SiC on Si Substrates Shoji, A., Okui, Y., Nishiguchi, T., Ohshima, S., Nishino, S. Trans Tech Publications	7 国際会議録 Epitaxial Growth of 3C-SiC on T-Shape Columnar Si Substrates Nishino, S., Shoji, A., Nishiguchi, T., Ohshima, S. Materials Research Society
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