A New Type of SiC Gas Sensor with a pn-Junction Structure

A New Type of SiC Gas Sensor with a pn-Junction Structure

著者名:

Nakashima, K.

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

1427

終了ページ:

1430

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013331
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

類似資料:

1 国際会議録 A New Type of SiC Gas Sensor with a pn-Junction Structure Nakashima, K., Okuyama, Y., Ando, S., Eryu, O., Abe, K., Yokoi, H., Oshima, T. Trans Tech Publications	7 国際会議録 Impurity Activation in N+ Ion-Implanted 6H-SiC with Pulsed Laser Annealing Method Eryu, O., Aoyama, K., Abe, K., Nakashima, K. Materials Research Society
2 国際会議録 Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC Ohshima, T., Uedono, A., Eryu, O., Lee, K.K., Abe, K., Itoh, H., Nakashima, K. Trans Tech Publications	8 国際会議録 Formation of Tungsten Ohmic Coutact on n-Type 6H-SiC by Pulsed Laser Processes Nakashima,K., Eryu,O., Kurne,T., Nakata,T., Inoue,M. Trans Tech Publications
3 国際会議録 Effects of Surface Treatments of 6H-SiC upon Metal-SiC Interfaces Abe, K., Sumitomo, M., Sumi, T., Eryu, O., Nakashima, K. Trans Tech Publications	9 国際会議録 Improved Ohmic Contacts to 6H-SiC by Pulsed Laser Processing Nakashima, K., Eryu, O., Ukai, S., Yoshida, K., Watanabe, M. Trans Tech Publications
4 国際会議録 Effects of Surface Treatments of 6H-SiC upon Metal-SiC Interfaces Abe, K., Sumitomo, M., Sumi, T., Eryu, O., Nakashima, K. Trans Tech Publications	10 国際会議録 Carrier Density Evaluation in P-Type SiC by Raman Scattering Harima, H., Hosoda, T., Nakashima, S. Trans Tech Publications
5 国際会議録 Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11-20), (1-100), and (0001) Oriented 6H-SiC Eryu, O., Matsuo, D., Abe, K., Nakashima, K. Trans Tech Publications	11 国際会議録 Origin of the Carrier Reduction by Annealing in n-Type ZnSe Miyajima,T., Okuyama,H., Akimoto,K., Wei,L., Tanigawa,S. Trans Tech Publications
6 国際会議録 Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11-20), (1-100), and (0001) Oriented 6H-SiC Eryu, O., Matsuo, D., Abe, K., Nakashima, K. Trans Tech Publications	12 国際会議録 VISIBLE ELECTROLUMINESCENCE FROM PN JUNCTION TYPE μc-SiC/POROUS Si/c-Si STRUCTURES Futagi, T., Matsumoto, T., Katsuno, M., Ohta, Y., Mimura, H., Kitamura, K. Materials Research Society

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