Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET

Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET

著者名:

Tournier, D.

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

1403

終了ページ:

1406

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013331
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

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2 国際会議録 Characterization of a 4H-SiC High Power Density Controlled Current Limiter Tournier, D., Godignon, Ph., Montserrat, J., Planson, D., Raynaud, C., Lazar, M., Chante, J.P., Sarrus, F., Bonhomme, … Trans Tech Publications	8 国際会議録 New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process P. Brosselard, D. Tournier, M. Vellvehi, J. Montserrat, P. Godignon, J. Millan Trans Tech Publications
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