Effects of Surface Treatments of 6H-SiC upon Metal-SiC Interfaces

Effects of Surface Treatments of 6H-SiC upon Metal-SiC Interfaces

著者名:

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

909

終了ページ:

912

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013331
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

類似資料:

1 国際会議録 Effects of Surface Treatments of 6H-SiC upon Metal-SiC Interfaces Abe, K., Sumitomo, M., Sumi, T., Eryu, O., Nakashima, K. Trans Tech Publications	7 国際会議録 A New Type of SiC Gas Sensor with a pn-Junction Structure Nakashima, K., Okuyama, Y., Ando, S., Eryu, O., Abe, K., Yokoi, H., Oshima, T. Trans Tech Publications
2 国際会議録 Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC Ohshima, T., Uedono, A., Eryu, O., Lee, K.K., Abe, K., Itoh, H., Nakashima, K. Trans Tech Publications	8 国際会議録 A New Type of SiC Gas Sensor with a pn-Junction Structure Nakashima, K., Okuyama, Y., Ando, S., Eryu, O., Abe, K., Yokoi, H., Oshima, T. Trans Tech Publications
3 国際会議録 Impurity Activation in N+ Ion-Implanted 6H-SiC with Pulsed Laser Annealing Method Eryu, O., Aoyama, K., Abe, K., Nakashima, K. Materials Research Society	9 国際会議録 Improved Ohmic Contacts to 6H-SiC by Pulsed Laser Processing Nakashima, K., Eryu, O., Ukai, S., Yoshida, K., Watanabe, M. Trans Tech Publications
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