Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI

Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI

著者名:

Chassagne, T.

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

343

終了ページ:

346

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013331
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

類似資料:

1 国際会議録 Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI Chassagne, T., Ferro, G., Wang, H., Stoemenos, Y., Peyre, H., Contreras, S., Camassel, J., Monteil, Y., Ghyselen, B. Trans Tech Publications	7 国際会議録 SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts H. Peyre, N. Habka, V. Souliere, M. Soueidan, G. Ferro, Y. Monteil, J. Camassel Trans Tech Publications
2 国際会議録 Characterization of 3C-SiC/SOI Deposited with HMDS Planes, N., Aboughe-Nze, P., Ravetz, M., Contreras, S., Vicente, P., Chassagne, T., Fraisse, B., Camassel, J., Monteil, … Trans Tech Publications	8 国際会議録 Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism Soueidan, M., Ferro, G., Stoemenos, J., Polychroniadis, E.K., Chaussende, D., Soares, F., Juillaguet, S., Camassel, J., … Trans Tech Publications
3 国際会議録 Hetero-Epitaxial Growth of 3C-SiC on SOI using HMDS Aboughe-Nze, P., Planes, N., Ravetz, M., Fraisse, B., Contreras, S., Vicente, P., Chassagne, T., Monteil, Y., Rushworth, … Electrochemical Society	9 国際会議録 Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates Chassagne, T., Ferro, G., Haas, H., Leycuras, A., Mank, H., Monteil, Y. Trans Tech Publications
4 国際会議録 Comparative Evaluation of Free-Standing 3C-SiC Crystals Polychroniadis, E. K., Balloud, C., Juillaguet, S., Ferro, G., Monteil, Y., Camassel, J., Stoemenos, J. Trans Tech Publications	10 国際会議録 Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt Jacquier, C., Ferro, G., Balloud, C., Zielinski, M., Camassel, J., Polychroniadis, E., Stoemenos, J., Cauwet, F., … Trans Tech Publications
5 国際会議録 Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers Ferro, G., Panknin, D., Stoemenos, J., Balloud, C., Camassel, J., Polychroniadis, E., Monteil, Y., Skorupa, W. Trans Tech Publications	11 国際会議録 Growth at High Rates and Characterization of Bulk 3C-SiC Material Ferro, G., Balloud, C., Juillaguet, S., Vicente, P., Camassel, J., Monteil, Y. Trans Tech Publications
6 国際会議録 Trends in Dopant Incorporation for 3C-SiC Films on Silicon M. Zielinski, M. Portail, H. Peyre, T. Chassagne, S. Ndiaye, B. Boyer, A. Leycuras, J. Camassel Trans Tech Publications	12 国際会議録 SOL Thinning Effects on 3C-SiC on SOI Planes, N., Moller, H., Camassel, J., Stoemenos, Y., Falkovski, L., Eickhoff, M., Krotz, G. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12