Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor
- 著者名:
Jeong, J.K. Um, M.Y. Na, H.J. Kim, B.S. Song, I.B. Kim, H.J. - 掲載資料名:
- Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 389-393
- 発行年:
- 2002
- 開始ページ:
- 267
- 終了ページ:
- 270
- 総ページ数:
- 4
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498949 [087849894X]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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