On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals

On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals

著者名:

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

139

終了ページ:

142

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013331
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

類似資料:

1 国際会議録 On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals Bickermann, M., Hofmann, D., Straubinger, T.L., Weingartner, R., Winnacker, A. Trans Tech Publications	7 国際会議録 Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method Straubinger, T.L., Bickermann, M., Rasp, M., Weingartner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications
2 国際会議録 Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth Bickermann, M., Hofmann, D., Straubinger, T.L., Weingartner, R., Winnacker, A. Trans Tech Publications	8 国際会議録 Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC Weingaertner, R., Bickermann, M., Hofmann, D., Rasp, M., Straubinger, T.L., Wellmann, P.J., Winnacker, A. Trans Tech Publications
3 国際会議録 Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth Bickermann, M., Weingartner, R., Hofmann, D., Straubinger, T.L., Winnacker, A. Trans Tech Publications	9 国際会議録 Study of Boron Incorporation During PVT Growth of p-type SiC Crystals Bickermann, M., Hofmann, D., Rasp, M., Straubinger, T.L., Weingaertner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications
4 国際会議録 Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth Bickermann, M., Weingartner, R., Hofmann, D., Straubinger, T.L., Winnacker, A. Trans Tech Publications	10 国際会議録 Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals Bickermann, M., Weingartner, R., Herro, Z., Hofmann, D., Kunecke, U., Wellmann, P.J., Winnacker, A. Trans Tech Publications
5 国際会議録 Stability Criteria for 4H-SiC Bulk Growth Straubinger, T.L., Bickermann, M., Hofmann, D., Weingaertner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications	11 国際会議録 On-line monitoring of PVT SiC bulk crystal growth using digital X-ray imaging Wellmann, P. J., Bickermann, M., Grau, M., Hofmann, D., Straubinger, T. L., Winnacker, A. MRS-Materials Research Society
6 国際会議録 Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method Straubinger, T.L., Bickermann, M., Rasp, M., Weingartner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications	12 国際会議録 Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation Wellmann, P. J., Bickermann, M., Hofmann, D., Kadinski, L., Selder, M., Straubinger, T. L., Winnacker, A. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12