N and p Type 6H-SiC Films for the Creation Diode and Triode Structure of Nuclear Particle Detectors

N and p Type 6H-SiC Films for the Creation Diode and Triode Structure of Nuclear Particle Detectors

著者名:

Ivanov, A.M.

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

1439

終了ページ:

1444

総ページ数:

6

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013330
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

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1 国際会議録 N and p Type 6H-SiC Films for the Creation Diode and Triode Structure of Nuclear Particle Detectors Ivanov, A.M., Strokan, N.B., Lebedev, A.A., Davydov, D.V., Savkina, N.S., Bogdanova, E.V. Trans Tech Publications	7 国際会議録 4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375°C A.M. Ivanov, E.V. Kalinina, N.B. Strokan, A.A. Lebedev Trans Tech Publications
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