Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance

Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance

著者名:

Na, H. J.

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

1383

終了ページ:

1386

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013330
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

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1 国際会議録 Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance Na, H.J., Kim, H.J., Adachi, K., Kiritani, N., Tanimoto, S., Okushi, H., Arai, K. Trans Tech Publications	7 国際会議録 Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation Na, H.J., Kim, D.H., Jung, S.Y., Song, I.B., Um, M.Y., Song, H.K., Jeong, J.K., Lee, J.B., Kim, H.J. Trans Tech Publications
2 国際会議録 Single Contact-Material MESFETs on 4H-SiC Tanimoto, S., Inada, M., Kiritani, N., Hoshi, M., Okushi, H., Arai, K. Trans Tech Publications	8 国際会議録 Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates Ono, R., Fujimaki, M., Hon-Joo, N., Tanimoto, S., Shinohe, T., Yatsuo, T., Okushi, H., Arai, K. Trans Tech Publications
3 国際会議録 Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs Kiritani, N., Hoshi, M., Tanimoto, S., Adachi, K., Nishizawa, S.-i., Yatsuo, T., Okushi, H., Arai, K. Trans Tech Publications	9 国際会議録 Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS) Ono, R., Fujimaki, M., Senzaki, J., Tanimoto, S., Shinohe, T., Okushi, H., Arai, K. Trans Tech Publications
4 国際会議録 Ohmic Contact Structure and Fabrication Process Applicable to Practical SiC Devices Tanimoto, S., Kiritani, N., Hoshi, M., Okushi, H. Trans Tech Publications	10 国際会議録 Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS) Ono, R., Fujimaki, M., Senzaki, J., Tanimoto, S., Shinohe, T., Okushi, H., Arai, K. Trans Tech Publications
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