Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC

Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC

著者名:

Ryu, S.-H.

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

1195

終了ページ:

1198

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013330
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

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1 国際会議録 Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC Ryu, S.-H., Agarwal, A., Richmond, J.T., Das, M.K., Lipkin, L.A., Palmour, J., Saks, N., Williams, J.R. Trans Tech Publications	7 国際会議録 Development of 10 kV 4H-SiC Power DMOSFETs Ryu, S.H., Agarwal, A., Krishnaswami, S., Richmond, J., Palmour, J. Trans Tech Publications
2 国際会議録 High-Current, NO-Annealed Lateral 4H-SiC MOSFETs Das, M.K., Chung, G.Y., Williams, J.R., Saks, N.S., Lipkin, L.A., Palmour, J.W. Trans Tech Publications	8 国際会議録 A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices Krishnaswami, S., Ryu, S.H., Heath, B., Agarwal, A.K., Palmour, J.W., Geil, B.R., Lelis, A.J., Scozzie, C.J. Trans Tech Publications
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4 国際会議録 Design and Process Issues for Silicon Carbide Power DiMOSFETS Ryu, Sei-Hyung, Agarwal, Anant K., Saks, Nelson S., Das, Mrinal K., Lipkin, Lori A., Singh, Ranbir, Palmour, John W. Materials Research Society	10 国際会議録 High Temperature Characterization of 4H-SiC Bipolar Junction Transistors Krishnaswami, S., Agarwal, A.K., Richmond, J., Capell, C., Ryu, S.H., Palmour, J.W., Geil, B.R., Katsis, D., Scozzie, … Trans Tech Publications
5 国際会議録 SiC Power Devices-An Overview Agarwal, Anant, Das, Mrinal, Krishnaswami, Sumithra, Palmour, John, Richmond, James, Ryu, Sei-Hyung Materials Research Society	11 国際会議録 4H-SiC DMOSFETs for High Frequency Power Switching Applications Ryu, Sei-Hyung, Agarwal, Anant K., Richmond, James, Palmour, John W. Materials Research Society
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