Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode
- 著者名:
Ohtsuka, K. Sugimoto, H. Kinouchi, S.I. Tarui, Y. Imaizumi, M. Takami, T. Ozeki, T. - 掲載資料名:
- Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 389-393
- 発行年:
- 2002
- 開始ページ:
- 1165
- 終了ページ:
- 1168
- 総ページ数:
- 4
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498949 [087849894X]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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12
国際会議録
Improvement of I-V Characteristics of Schottky Barrier Diode by 4H-SiC Surface Planarization
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