Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure

Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure

著者名:

Harada, S.

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

1069

終了ページ:

1072

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013330
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

類似資料:

1 国際会議録 Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Adachi, K., Fukuda, K., Arai, K. Trans Tech Publications	7 国際会議録 Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing Senzaki, J., Fukuda, K., Kojima, K., Harada, S., Kosugi, R., Suzuki, S., Suzuki, T., Arai, K. Trans Tech Publications
2 国際会議録 Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface Hatakeyama, T., Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Fukuda, K., Shinohe, T., Arai, K. Trans Tech Publications	8 国際会議録 Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs Kosugi, R., Okamoto, M., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Arai, K. Trans Tech Publications
3 国際会議録 Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface Hatakeyama, T., Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Fukuda, K., Shinohe, T., Arai, K. Trans Tech Publications	9 国際会議録 Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs Kosugi, R., Okamoto, M., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Arai, K. Trans Tech Publications
4 国際会議録 4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure Suzuki, S., Harada, S., Yatsuo, T., Kosugi, R., Senzaki, J., Fukuda, K. Trans Tech Publications	10 国際会議録 Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs Suzuki, S., Harada, S., Kosugi, R., Senzaki, J., Fukuda, K. Trans Tech Publications
5 国際会議録 Temperature Dependences of Channel Mobility and Threshold Voltage in 4H- and 6H-SiC MOSFETs Harada, S., Kosugi, R., Senzaki, J., Suzuki, S., Cho, W.J., Fukuda, K., Arai, K. Materials Research Society	11 国際会議録 Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs Suzuki, S., Harada, S., Kosugi, R., Senzaki, J., Fukuda, K. Trans Tech Publications
6 国際会議録 Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing Senzaki, J., Fukuda, K., Kojima, K., Harada, S., Kosugi, R., Suzuki, S., Suzuki, T., Arai, K. Trans Tech Publications	12 国際会議録 Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs Kojima, K., Ohno, T., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Kushibe, M., Masahara, K., Ishida, Y., Takahashi, … Trans Tech Publications

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