Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs

Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs

著者名:

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

1045

終了ページ:

1048

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013330
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

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2 国際会議録 Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface Hatakeyama, T., Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Fukuda, K., Shinohe, T., Arai, K. Trans Tech Publications	8 国際会議録 Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Adachi, K., Fukuda, K., Arai, K. Trans Tech Publications
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