On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures

On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures

著者名:

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

1005

終了ページ:

1008

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013330
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

類似資料:

1 国際会議録 On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures Olafsson, H.O., Allerstam, F., Sveinbjornsson, E.O. Trans Tech Publications	7 国際会議録 Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminum Ion-Implanted Material Gudjonsson, G., Olafsson, H. O., Allerstam, F., Nilsson, P. A., Sveinbjornsson, E. O., Rodle, T., Jos, R. Trans Tech Publications
2 国際会議録 New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures Olafsson, H.OE., Sveinbjornsson, Einar, Rudenko, T.E., Kilchytska, V.I., Tyagulski, I.P., Osiyuk, I.N. Trans Tech Publications	8 国際会議録 A Study of Deep Energy-Level Traps at the 4H-SiC/SiO₂ Interface and Their Passivation by Hydrogen F. Allerstam, E.Ö. Sveinbjörnsson Trans Tech Publications
3 国際会議録 A Comparison between SiO2/4H-SiC Interface Traps on (0001) and (11-20) Faces Olafsson, H.Oe., Hallin, C., Sveinbjoernsson, E.Oe. Trans Tech Publications	9 国際会議録 A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface Olafsson, H.O., Sveinbjornsson, E.O., Rudenko, T.E., Kilchytska, V.I., Tyagulski, I.P., Osiyuk, I.N. Trans Tech Publications
4 国際会議録 Sodium Enhanced Oxidation of Si-Face 4H-SiC: A Method to Remove Near Interface Traps E.O. Sveinbjornsson, F. Allerstam, H.O. Olafsson, G. Gudjonsson, D. Dochev, T. Rodle, R. Jos Trans Tech Publications	10 国際会議録 New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures Olafsson, H.O., Sveinbjornsson, E.O., Rudenko, T.E., Kilchytska, V.I., Tyagulski, I.P., Osiyuk, I.N. Trans Tech Publications
5 国際会議録 Effect of High Temperature Oxidation of 4H-SiC on the Near-Interface Traps Measured by TDRC F. Allerstam, E.Ö. Sveinbjörnsson Trans Tech Publications	11 国際会議録 High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment Allerstam, F., Gudjonsson, G., Olafsson, H. O., Sveinbjornsson, E. O., Rodle, T., Jos, R. Trans Tech Publications
6 国際会議録 Sodium Enhanced Oxidation: Absence of Shallow Interface Traps after Removal of Sodium Ions from the SiO₂/4H-SiC Interface P.G. Hermannsson, F. Allerstam, S. Hauksson, E.Ö. Sveinbjörnsson Trans Tech Publications	12 国際会議録 Formation of Deep Traps at the 4H-SiC/SiO2 Interface when Utilizing Sodium Enhanced Oxidation F. Allerstam, G. Gudjonsson, E.O. Sveinbjornsson, T. Rodle, R. Jos Trans Tech Publications

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