Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment

Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment

著者名:

Maeyama, Y.

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

997

終了ページ:

1000

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013330
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

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1 国際会議録 Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment Maeyama, Y., Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T., Shirafuji, T. Trans Tech Publications	7 国際会議録 Mechanisms in Electrochemical Etching of α-SiC Substrates Mikami, H., Hatayama, T., Yano, H., Uraoka, Y., Fuyuki, T. Trans Tech Publications
2 国際会議録 Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETs Yano, H., Maeyama, Y., Furumoto, Y., Hatayama, T., Uraoka, Y., Fuyuki, T. Trans Tech Publications	8 国際会議録 Surface Structure of Electrochemically Etched α-SiC Substrates Mikami, H., Umetani, A., Hatayama, T., Yano, H., Uraoka, Y., Fuyuki, T. Trans Tech Publications
3 国際会議録 Modification of SiO2/4H-SiC Interface Properties by High-Pressure H2O Vapor Annealing D. Takeda, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki Trans Tech Publications	9 国際会議録 Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T. Trans Tech Publications
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