Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission

Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission

著者名:

Shigiltchoff, O.

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

921

終了ページ:

924

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013330
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

類似資料:

1 国際会議録 Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission Shigiltchoff, O., Kimoto, T., Hobgood, D., Neudeck, P.G., Porter, L.M., Devaty, R.P., Choyke, W.J. Trans Tech Publications	7 国際会議録 Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC R.P. Devaty, F. Yan, W.J. Choyke, A. Gali, T. Kimoto Trans Tech Publications
2 国際会議録 Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission Shigiltchoff, O., Bai, S., Devaty, R.P., Choyke, W.J., Kimoto, T., Hobgood, D., Neudeck, P.G., Porter, L.M. Trans Tech Publications	8 国際会議録 New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and ⁴He Ion Irradiated 4H SiC F. Yan, R.P. Devaty, W.J. Choyke, T. Kimoto, T. Ohshima Trans Tech Publications
3 国際会議録 Four Current Examples of Characterization of Silicon Carbide Bai, S., Ke, Yue, Shishkin, Y., Shigiltchoff, O., Devaty, R.P., Choyke, W.J., Strauch, D., Stojetz, B., Dorner, B., … Materials Research Society	9 国際会議録 Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100°C and 1500°C and Measurements of Lifetime and Photoluminescence W.M. Klahold, R.P. Devaty, W.J. Choyke, K. Kawahara, T. Kimoto Trans Tech Publications
4 国際会議録 Valence Band Splittings of 15R-SiC Measured using Wavelength Modulated Absorption Spectroscopy Devaty, R.P., Bai, S., Choyke, W.J., Hobgood, D., Larkin, D.J. Trans Tech Publications	10 国際会議録 Elastic Waves in Nano-Columnar Porous 4H-SiC Measured by Brillouin Scattering R.P. Devaty, M.J. Clouter, Y. Ke, W.J. Choyke Trans Tech Publications
5 国際会議録 Structural Properties of GaN films Grown by Molecular Beam Epitaxy on Vicinal SiC(0001) Lee, C.D., Feenstra, R.M., Shigiltchoff, O., Devaty, R.P., Choyke, W.J. Materials Research Society	11 国際会議録 Oxygen-Related Defect Centers in 4H Silicon Carbide Dalibor,T., Pensl,G., Yamamoto,T., Kimoto,T., Matsunami,H., Sridhara,S.G., Nizhner,D.G., Devaty,R.P., Choyke,W.J. Trans Tech Publications
6 国際会議録 Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n-and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 … F. Yan, R.P. Devaty, W.J. Choyke, K. Danno, G. Alfieri Trans Tech Publications	12 国際会議録 Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height A. Kinoshita, T. Ohyanagi, T. Yatsuo, K. Fukuda, H. Okumura Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12