Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing

Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing

著者名:

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

799

終了ページ:

802

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013330
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

類似資料:

1 国際会議録 Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing Tanaka, Y., Tanoue, H., Arai, K. Trans Tech Publications	7 国際会議録 Characterization Of n-Type Layer By S+ Ion Implantation In 4H-SiC Tanaka, Yasunori, Kobayashi, Naoto, Okumura, Hajime, Yoshida, Sadafumi, Hasegawa, Masataka, Ogura, Masahiko, Tanoue, … Materials Research Society
2 国際会議録 Electrical Activation of Ion-Implanted Nitrogen and Aluminum in 4H-SiC by Excimer Laser Annealing Tanaka, Y., Tanoue, H., Arai, K. Trans Tech Publications	8 国際会議録 Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap Negoro, Y., Katsumoto, K., Kimoto, T., Matsunami, H. Trans Tech Publications
3 国際会議録 Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High Temperature Senzaki, J., Fukuda, K., Imai, S., Tanaka, Y., Kobayashi, N., Tanoue, H., Okushi, H., Arai, K. Trans Tech Publications	9 国際会議録 Impact of CF₄ Plasma Treatment on the Surface Roughness of Ion Implanted SiC Induced by High Temperature Annealing T. Sugimoto, M. Satoh, T. Nakamura, K. Mashimo, H. Doi Trans Tech Publications
4 国際会議録 Hall Effect Measurements At Low Temperature Of Arsenic Implanted Into 4H-Silicon Carbide Senzaki, J., Fukuda, K., Ishida, Y., Tanaka, Y., Tanoue, H., Kobayashi, N., Tanaka, T., Arai, K. Materials Research Society	10 国際会議録 Micro-Structural and Electrical Properties of Al-Implanted & Lamp-Annealed 4H-SiC Nakamura, H., Watanabe, H., Yamazaki, J., Tanaka, N., Malhan, R.K. Trans Tech Publications
5 国際会議録 Hot-Implantation of Phosphorus Ions into 4H-SiC Imai, S., Kobayashi, S., Shinohe, T., Fukuda, K., Tanaka, Y., Senzaki, J., Tanoue, H., Kobayashi, N., Okushi, H. Trans Tech Publications	11 国際会議録 Micro-Structural and Electrical Properties of Al-Implanted & Lamp-Annealed 4H-SiC Nakamura, H., Watanabe, H., Yamazaki, J., Tanaka, N., Malhan, R.K. Trans Tech Publications
6 国際会議録 Activating Ion Implants in 4H-SiC by Annealing with An AIN or BN Cap* Jones, K., Shah, P.B., Ervin, M.H., Deenge, M.A., Vispute, R.D., Freitas, L.A., Gerardi, G.J. Electrochemical Society	12 国際会議録 Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing Senzaki, J., Harada, S., Kosugi, R., Suzuki, S., Fukuda, K., Arai, K. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12