Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC

Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC

著者名:: Satoh, M.
掲載資料名:: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
シリーズ名:: Materials science forum
シリーズ巻号:: 389-393
発行年:: 2002
開始ページ:: 773
終了ページ:: 778
総ページ数:: 6
出版情報:: Zuerich, Switzerland: Trans Tech Publications
ISSN:: 02555476
ISBN:: 9780878498949 [087849894X]
言語:: 英語
請求記号:: M23650
資料種別:: 国際会議録

詳細

TDL書誌ID:	ZA00013330
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

類似資料:

1 国際会議録 Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC Satoh, M. Trans Tech Publications	7 国際会議録 Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001) Nakamura, T., Matsumoto, S., Horibe, T., Satoh, M. Trans Tech Publications
2 国際会議録 Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11-20), (1-100), and (0001) Oriented 6H-SiC Eryu, O., Matsuo, D., Abe, K., Nakashima, K. Trans Tech Publications	8 国際会議録 Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001) Nakamura, T., Matsumoto, S., Horibe, T., Satoh, M. Trans Tech Publications
3 国際会議録 Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11-20), (1-100), and (0001) Oriented 6H-SiC Eryu, O., Matsuo, D., Abe, K., Nakashima, K. Trans Tech Publications	9 国際会議録 Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC Syvajarvi, M., Yakimova, R., Yazdi, G.R., Arjunan, A., Toupitsyn, E., Sudarshan, T.S. Trans Tech Publications
4 国際会議録 Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20) Satoh, M., Suzuki, T. Trans Tech Publications	10 国際会議録 Development and Investigation on ERAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing Shibagaki, M., Satoh, M, Kurematsu, Y., Numajiri, K., Watanabe, F., Haga, S., Miura, K., Suzuki, T., Miyagawa, S. Trans Tech Publications
5 国際会議録 Characterization of Implantation Layer in (1100) Oriented 4H- and 6H-SiC Satoh, M., Nakaike, Y., Uchimura, K., Kuriyama, K. Trans Tech Publications	11 国際会議録 Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiC Schmid, F., Laube, M., Pensl, G., Wagner, G., Maier, M. Trans Tech Publications
6 国際会議録 Electrical Properties of N Ion Implanted Layer in 3C-SiC(100) Grown on Self-Standing 3C-SiC Substrate E. Taguchi, Y. Suzuki, M. Satoh Trans Tech Publications	12 国際会議録 Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiC Schmid, F., Laube, M., Pensl, G., Wagner, G., Maier, M. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12