Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition

Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition

著者名:

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

659

終了ページ:

662

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013330
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

類似資料:

1 国際会議録 Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition Suda, J., Nakamura, S., Miura, M., Kimoto, T., Matsunami, H. Trans Tech Publications	7 国際会議録 Improved Dielectric ind Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing Kimoto, T., Kawano, H., Noborio, M., Suda, J., Matsunami, H. Trans Tech Publications
2 国際会議録 SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth Miura, M., Nakamura, S.-i., Suda, J., Kimoto, T., Matsunami, H. Trans Tech Publications	8 国際会議録 Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition Fujiwara, H., Danno, K., Kimoto, T., Tojo, T., Matsunami, H. Trans Tech Publications
3 国際会議録 Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition Nakamura, S., Kimoto, T., Matsunami, H. Trans Tech Publications	9 国際会議録 4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET) Kaido, J., Kimoto, T., Suda, J., Matsunami, H. Trans Tech Publications
4 国際会議録 Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition Nakamura, S., Kimoto, T., Matsunami, H. Trans Tech Publications	10 国際会議録 Short-Channel Effects in 4H-SiC MOSFETs Noborio, M., Kanzaki, Y., Suda, J., Kimoto, T., Matsunami, H. Trans Tech Publications
5 国際会議録 Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition Kato, M., Tanaka, S., Ichimura, M., Arai, E., Nakamura, S., Kimoto, T. Trans Tech Publications	11 国際会議録 Surface Mechanisms in Homoepitaxial Growth on α-SiC{0001}-Vicinal Faces Nakamura, S.I., Kimoto, T., Matsunami, H. Trans Tech Publications
6 国際会議録 Wide-Area Homoepitaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition Nakamura, S.-i., Kimoto, T., Matsunami, H. Trans Tech Publications	12 国際会議録 Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition Chen, Yi, Kimoto, T., Takeuchi, Y., Malhan, R.K., Matsunami, H. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12